novel heterojunction NiO/B-Ga2O3 diode

A novel heterojunction NiO/B-Ga2O3 diode was fabricated using p-type NiO deposited by ion-assisted e-beam evaporation on n-type B-Ga2O3 epitaxial wafers.  Desert Silicon Inc. Sn doped spin-on-glass was used to dope the backside of the wafer with a Sn concentration of...