novel heterojunction NiO/B-Ga2O3 diode

A novel heterojunction NiO/B-Ga2O3 diode was fabricated using p-type NiO deposited by ion-assisted e-beam evaporation on n-type B-Ga2O3 epitaxial wafers.  Desert Silicon Inc. Sn doped spin-on-glass was used to dope the backside of the wafer with a Sn concentration of...

SOG Customer Application Questions & Answers

We would like to use your SOD as a source for dopants, we are currently interested in sources for B, P and As, and have some questions regarding that process: 1. Being a research facility, using the same tools for various processes we are cautious when introducing new...