In article number 2100653, Thien N. Truong, Josua Stuckelberger, Hieu T. Nguyen, and co-workers explored the possibility of p-type co-doping poly-Si/SiOx passivating contacts using the spin-on method with different mixtures of Ga and B glass solutions. READ FULL...
Herein, we fabricate and characterize p-type passivating contacts based on industrial intrinsic polycrystalline silicon (poly-Si)/thermal-SiOx/n-type crystalline Si (c-Si) substrates using a spin-on doping technique. The impacts of drive-in temperature, drive-in dwell...
Polycrystalline silicon (poly-Si) passivating contacts are promising technologies to promote the efficiency of silicon solar cells, due to their low carrier recombination and low contact resistivity. In this work, we present phosphorus spin-on doping as an alternative...
In this study, we explore the utilization of inkjet printing technology with liquid ink to fabricate boron-doped polycrystalline silicon (poly-Si)/SiOx passivating contacts. The impacts of substrate morphology, baseplate temperature, and surface oxide on the printing...
A novel heterojunction NiO/B-Ga2O3 diode was fabricated using p-type NiO deposited by ion-assisted e-beam evaporation on n-type B-Ga2O3 epitaxial wafers. Desert Silicon Inc. Sn doped spin-on-glass was used to dope the backside of the wafer with a Sn concentration of...
