by 5pints | Nov 2, 2020 | Current Future Apps
A novel heterojunction NiO/B-Ga2O3 diode was fabricated using p-type NiO deposited by ion-assisted e-beam evaporation on n-type B-Ga2O3 epitaxial wafers. Desert Silicon Inc. Sn doped spin-on-glass was used to dope the backside of the wafer with a Sn concentration of...
by Kent | Jun 9, 2017 | Current Future Apps, Media
Matthew A. Stott1, Thomas A. Wall1, Damla Ozcelik2, Joshua W. Parks2, Gopikrishnan G. Meena2, Erik Hamilton1, Roger Chu1, Holger Schmidt2 and Aaron R. Hawkins1 1Department of Electrical and Computer Engineering, Brigham Young University, 459 Clyde Building, Provo,...
by Kent | May 26, 2017 | Current Future Apps, Media
Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology Ke Zeng, Joshua S. Wallace, Christopher Heimburger, Kohei Sasaki, Akito Kuramata, Takekazu Masui, Joseph A. Gardella Jr., and Uttam Singisetti, Member, IEEE Read full Article Here:...
by Kent | May 25, 2017 | Current Future Apps, Media
NREL Spin-on Dopants Enabling Low-Cost Interdigitated Back Passivated Contact Solar Cells Benjamin G. Lee, Derek M. Fogel, San Theingi, William Nemeth, David L. Young, Pauls Stradins National Renewable Energy Lab MOTIVATION • Patternable doping of passivated...
by Kent | Feb 16, 2017 | Current Future Apps, Media
Process author/customer Benjamin Lee at NREL 1. This is a silicon single-junction solar cell. 2. The purpose of the dopants is for doping the p- and n-regions of the solar cell. We are using n-type Si wafers, so the p-doping is for the emitter, and the n-doping is for...
by Kent | Feb 15, 2017 | Current Future Apps, Media
We would like to use your SOD as a source for dopants, we are currently interested in sources for B, P and As, and have some questions regarding that process: 1. Being a research facility, using the same tools for various processes we are cautious when introducing new...
