A novel heterojunction NiO/B-Ga2O3 diode was fabricated using p-type NiO deposited by ion-assisted e-beam evaporation on n-type B-Ga2O3 epitaxial wafers.  Desert Silicon Inc. Sn doped spin-on-glass was used to dope the backside of the wafer with a Sn concentration of 4×1021cm-³.  Rapid Thermal Annealing was performed to further drive the Sn dopant into the substrate to reduce contact resistance.  The fabricated diodes exhibited excellent rectifying current-voltage characteristics, with rectifying ratio > 106 @±4V.  The measured specific on-resistance is 2.9mOhm-cm³.  The leakage current demonstrated one order of magnitude lower vs. that of the compared Ni/B-Ga2O3 Schottky barrier diode.  The breakdown voltage of the heterojunction NiO/B-Ga2O3 diodes is 4.5X higher vs. that of the Ni/B-Ga2O3 Schottky barrier diode.  To further read the results go to Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) September 13-18, 2020, Vienna, Austria.  “Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga2O3 Diode”