Current and Future Applications of SOG
novel heterojunction NiO/B-Ga2O3 diode
Dae-Hwan Ahn_2019_IEEE Zn Doped SOG
Dae-Hwan Ahn_2017_Journal of Appl. Phys
Silicate Spin-on-Glass as an Overcoat Layer for SiO2 Ridge Waveguides
Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
NREL Spin-on Dopants Enabling Low-Cost Interdigitated Back Passivated Contact Solar Cells
NREL (National Renewable Energy Laboratory) Spin on dopant process for solar cell
SOG Customer Application Questions & Answers
Benefits of Wafer Bonding
Silicate Spin-On-Glass (SOG) as an Overcoat Layer for SiO2 Ridge Waveguides
NREL Spin-on Dopants Enabling Low-Cost Interdigitated Back Passivated Contact Solar Cells
NDG-7000R & NDG-5000 – used successfully for the planarization of 200mm (8″) MEMS process. “The hole filling ability of your SOG is quite good, and the surface roughness after spin coating of SOG is also low enough to our spec of Ra < 0.2 nm. If the planarization process is the final step I think NDG 7000R can be used in our fabrication process”
NDG-2000 is being used in LCD (Liquid Crystal Display) processing for a indexing layer to reduce the spectral reflectance of the indium tin-oxide (ITO) electrodes as well as an environmental protection for ITO pads. The SOG in the cell interior affects the specular reflectance of the LCD display products. It has also been shown that SOG can also serve as an insulating or planarization layer.
B-1000 is being used in single junction solar cells processing as a carrier of the dopant of the p¯ and n¯ type regions of the solar cell device. Using an n¯ type silicon wafer, the p¯ doping is for the emitter and the n¯ for the the n÷÷ contact to the base.
NDG-5000 used as a coating for a masking layer on on side of a wafer.
NDG-5000 is being used as a dielectric layer for transmission lines.
ZN-640 used in a QWIP (quantum well IR photo-detector) device for commercial applications.
SN-365 successfully used as a doping method in processing of MOSFETs devices on Ga2O3 substrates for source/drain effectiveness. The SOG doping provided a simple, low cost (no ion implanter needed) effective way to make ohmic contact to lower doped Ga2O3 channel. Improved peak current density and peak trans-conductance is achieved with this method for a 2.0µm device. The devices also showed large ON/OFF ratio and maintained a high breakdown voltage even after high temperature dopant drive in the anneal step.
NDG-5000/7000 used as a overcoat layer on PECVD SiO2 waive-guides to smooth out surface topography and act as a moisture barrier. The measured optical throughput also improves vs. un-coated with SOG material. Refer to Optical Society of America Technical Digest 2015, paper jTH2A.29/CLEO Conference-2015, “Silicate Spin-On-Glass (SOG) as an Overcoat Layer for SiO2 Ridge Waveguides”