In this study, we explore the utilization of inkjet printing technology with liquid ink to fabricate boron-doped polycrystalline silicon (poly-Si)/SiOx passivating contacts. The impacts of substrate morphology, baseplate temperature, and surface oxide on the printing performance were investigated to achieve distinct printed patterns. Moreover, a pre-oxidation process at 750 °C for 30 min was conducted as a strategy to prevent dopant spreading from the printed pattern via the gas phase during the high-temperature annealing.
B-1500-HP: Inkjet-printed boron-doped poly-Si passivating contact: