Herein, we fabricate and characterize p-type passivating contacts based on industrial intrinsic polycrystalline silicon (poly-Si)/thermal-SiO_x/n-type crystalline Si (c-Si) substrates using a spin-on doping technique. The impacts of drive-in temperature, drive-in dwell time, and intrinsic poly-Si thickness on the boron-doped poly-Si passivating contacts are investigated.

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