Nov 2, 2020
A novel heterojunction NiO/B-Ga2O3 diode was fabricated using p-type NiO deposited by ion-assisted e-beam evaporation on n-type B-Ga2O3 epitaxial wafers. Desert Silicon Inc. Sn doped spin-on-glass was used to dope the backside of the wafer with a Sn concentration of...
Feb 13, 2020
Dae-Hwan Ahn_2019_IEEE Zn Doped SOG
Feb 13, 2020
Dae-Hwan Ahn_2017_Journal of Appl. Phys. 122. 135704 -1
