Medium Phosphorous doped spin-on glass silica
The P-XXX series of spin-on dopants are Phosphorosilicate products designed for chemically doping silicon to produce device structures. These structures include:
MOS: N-Well, Source/Drain
Analog Bipolar/Discrete: Isolation, Base, Emitter, Diode/Deep N Junction
This is a standard silicate phosphorous doped glass very typical for semiconductor applications. Typical curing at 150° – 200°C gives a low density but solid film. It continues to become increasingly dense as temperature increases to 400 C, 600°C or higher. We recommend baking our material at a slightly higher temperature than what the device will see in any post processing if the material is to remain with the part. For doping applications the glass is often removed after drive in. The phosphorous in glass form is easier and less expensive to process then solid source, ion implant, hazardous gas sources, and other processes.
For Data Sheet click below:
(Compare to Honeywell ACCUSPIN P-8545 and P-854 phosphorus Spin-on dopants)