Polycrystalline silicon (poly-Si) passivating contacts are promising technologies to promote the efficiency of silicon solar cells, due to their low carrier recombination and low contact resistivity. In this work, we present phosphorus spin-on doping as an alternative doping method to fabricate high performance poly-Si passivating contacts. The influences of thermal treatments and intrinsic amorphous Si thickness on poly-Si passivating contact quality were investigated.

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