Spin-on Glass B-1200HP


The B-1XXX series of spin-on dopants are borosilicate products designed for chemically doping silicon to produce device structures. These structures include:

MOS: P-Well, Source/Drain

Analog Bipolar/Discrete: Isolation, Base, Emitter, Diode/Deep P Junction

MEMS-boron etch stop

Benefits: Lowest diffusion damage available in the industry


Typical Application

This is a standard silicate boron doped glass very typical for semiconductor applications. Typical curing at 150° – 200°C gives a low density but solid film. It continues to become increasingly dense as temperature increases to 400 C, 600°C or higher. We recommend baking our material at a slightly higher temperature than what the device will see in any post processing if the material is to remain with the part. For doping applications the glass is often removed after drive in. The boron in glass form is easier and less expensive to process then solid source, ion implant, hazardous gas sources, and other processes.


For Data Sheet click below:

(Compare to Honeywell ACCUSPIN B-XXX Boron Spin-on Dopant)