by 5pints | Feb 13, 2020 | Media
Dae-Hwan Ahn_2019_IEEE Zn Doped SOG
by 5pints | Feb 13, 2020 | Media
Dae-Hwan Ahn_2017_Journal of Appl. Phys. 122. 135704 -1
by Kent | Jun 9, 2017 | Current Future Apps, Media
Matthew A. Stott1, Thomas A. Wall1, Damla Ozcelik2, Joshua W. Parks2, Gopikrishnan G. Meena2, Erik Hamilton1, Roger Chu1, Holger Schmidt2 and Aaron R. Hawkins1 1Department of Electrical and Computer Engineering, Brigham Young University, 459 Clyde Building, Provo,...
by Kent | May 26, 2017 | Current Future Apps, Media
Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology Ke Zeng, Joshua S. Wallace, Christopher Heimburger, Kohei Sasaki, Akito Kuramata, Takekazu Masui, Joseph A. Gardella Jr., and Uttam Singisetti, Member, IEEE Read full Article Here:...
by Kent | May 25, 2017 | Current Future Apps, Media
NREL Spin-on Dopants Enabling Low-Cost Interdigitated Back Passivated Contact Solar Cells Benjamin G. Lee, Derek M. Fogel, San Theingi, William Nemeth, David L. Young, Pauls Stradins National Renewable Energy Lab MOTIVATION • Patternable doping of passivated...
by Kent | Feb 16, 2017 | Current Future Apps, Media
Process author/customer Benjamin Lee at NREL 1. This is a silicon single-junction solar cell. 2. The purpose of the dopants is for doping the p- and n-regions of the solar cell. We are using n-type Si wafers, so the p-doping is for the emitter, and the n-doping is for...